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 TPS601A(F)
TOSHIBA Phototransistor Silicon NPN Epitaxial Planar
TPS601A(F)
Lead(Pb)-Free Photoelectric Counter Position Detection Various Kinds Of Readers
Unit in mm
* * *
TO-18 metal CAN package High sensitivity. Sharp directivity. Incident light can be effectively used. : 1/2 = 10 (typ.)
Absolute Maximum Ratings (Ta = 25C)
Characteristic Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Collector power dissipation derating (Ta > 25C) Operating temperature range Storage temperature range Symbol VCEO VECO IC PC PC /C Topr Tstg Rating 40 5 50 150 -1.2 -40~125 -55~150 Unit V V mA mW mW / C C C
TOSHIBA
0-5A1
Weight: 0.39 g (typ.)
Pin Connection
2 1 1 . Emitter 2 . Collector
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2007-10-01
TPS601A(F)
Opto-Electrical Characteristics (Ta = 25C)
Characteristic Dark current Symbol ID (ICEO) Test Condition VCE = 30V, E = 0 TPS601A (F) Light current IL VCE = 3V TPS601A (A,F) 2 E = 0.1mW / cm (Note) TPS601A (B,F) TPS601A (C,F) Collector-emitter saturation voltage Switching time rise time fall time VCE (sat) tr tf P
1 2
Min 100 100 200 400
Typ. 0.01 0.25 2 2 800 10
Max 0.2 300 600 1200 0.4
Unit A
A
IC = 30 A, E = 0.1mW / cm VCC = 5V, IC = 10mA RL = 100
2
(Note)
V s nm
Peak sensitivity wavelength Half value angle
Note: Color temperature = 2870K, standard tungsten lamp.
Precaution
Please be careful of the followings. 1. Soldering temperature: 260C max. Soldering time: 5s max. (Soldering portion of lead: Above 1.5mm from the body of the device.) 2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device. Soldering shall be performed after lead forming.
Product Indication
Model name Monthly production lot S601A Production month (Jan-Dec are indicated by alphabets of A-L) Production year(last digit of A.D. is indicated) Letter color : Red
2
2007-10-01
TPS601A(F)
Fig.1 Switching time test circuit
Input TLN108(F) (GaAs LED) R RL VCC Input pulse 0 Output Output pulse 0 tr 10% tf 90%
PC - Ta
160 10
2
ID - Ta
(typ.)
VCE = 30 V E=0
Allowable collector power Dissipation PC (mW)
120
Dark current ID (A)
0 40 80 120 160 200
10
1
80
10-1
10-2
40 10-3 10-4 0
0
40
80
120
160
Ambient temperature
Ta (C)
Ambient temperature Ta (C)
IL - E
50 30
(typ.)
200 100
Spectral Response
(typ.)
Ta = 25C
Light current IL (mA)
(%) Relative sensitivity
10
2
10 5 3
50 30
10 5 3
1 0.5 0.3 VCE = 3V Ta = 25C Color Temperature=2870K
0.1 0.1
0.3
1
3
30
1 400
600
800
1000
1200
Radiant incidence E (mW/cm )
Wavelength (nm)
3
2007-10-01
TPS601A(F)
Directional Sensitivity Characteristic (typ.)
12
Frequency Characteristics
VCC = 5V 1200 Ta = 25 Light source = TLN108(F) (GaAs LED)
(typ.)
(Ta = 25C)
8
20 30 40 50 60 70 80 90 1.0 0.8 0.6 0.4
10
0
10
20 30 40 50 60 70 80
(dB) Relative input
Radiation Angle
4 0 -4 -8 -12
RL=100
1k -16 -20 1
500
0.2
0
90
10
30
100
300
1000
Relative sensitivity Frequency f (kHz)
Switching Characteristics
(typ.)
Ta=25C Input TLN108(F) (GaAs LED)
R
Input pulse VCC Output 10V pulse Output td RL tr tf
90% 10%
Switching time (s)
200 100 50 30
tr (RL=10k)
tf (RL=10k) tr (RL=1k)
10 td (RL=10k) td (RL=100, 1k) 3 tf (RL=100) tr (RL=100) 5 1 0.02 0.1 0.3 1 tf (RL=1k)
3
10
Collector current IC (mA)
4
2007-10-01
TPS601A(F)
Relative IL - Ta
2.0 E = 0.1mW/cm2 VCE = 3V 1.6
(typ.)
100 50
Coupling Characteristics With TLN201(F)
Ta = 25 30 IE=25.5mW/sr 10 5 3 TPS601A(F) using sample IL = 226A at VCE = 3V 2 E = 0.1mW/cm
d
Relative light current
1.2
0.8
Collector current IC
-20 0 20 40 60 80 100
(mA)
1 0.5 0.3
0.4
0 -40
0.1 1
3
5
10
30 50
100
300 500 1000
Ambient temperature Ta (C)
Distance
d (mm)
Coupling Characteristics With TLN108(F)
100 50 Ta =25C
(mA)
30 11.7 10 5 3
23
IE=4mW/sr
Collector current IC
1 TPS601A(F) ... IL = 226A at VCE = 3V 0.5 E = 0.1mW/cm2 1 0.3
d
0.1 0.5
1
3
5
10
30
50
100
200
Distance
d (mm)
5
2007-10-01
TPS601A(F)
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
6
2007-10-01


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